Abstract
The RF noise characteristics of lattice-matched and strained In0.52Al0.48As/InxGa1−xAs HEMTs grown by MBE have been investigated. The indium composition of the InxGa1−xAs channel was varied from x = 0.53 to 0.80. While the gain and speed performance were significantly improved with the increase of indium composition as expected, the noise characteristics showed that the microwave noise increases with the increase of the indium composition.
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