Effect of strain-induced polarization field on band structure of MoS2 nanoribbon

Abstract

Single-layered transition metal dichalcogenides (TMDs) materials show intriguing device application potential due to their superior adjustability under various mechanisms. External strain can produce huge polarization fields inside two-dimensional piezoelectric semiconductor materials to modulate the relevant properties. In this paper, the strain-induced polarization field in monolayer zigzag MoS2 nanoribbon is specifically discussed. For comparison, we also study the deformation potential by means of the strain-modified bond lengths and hopping energies. The edge states and band gap indicate a distinct change due to polarization field. This work can put forward feasible perspectives for designing low-dimensional materials-based devices.