Abstract

The mechanical exfoliation of single layer transition metal dichalcogenides opens a new window in the research arena related to the application of two-dimensional materials in exciton laser technology. In this present study, we have parameterized and theoretically solved semiconductor rate equation for single layer Transition metal Dichalcogenides (TMDs) [$WS_{2}, {WSe}_{2}$ and ${MoTe}_{2}]$ exciton lasers. We have computed the threshold exciton density and also the variation of output photon flux density with the changes of input current density for different coupling factors. To explore the high frequency performance of TMD exciton lasers, we have reported high frequency modulation response of the exciton lasers considered in this study. To have a better comparative insight into the high frequency performance of these lasers, we have also calculated intrinsic and -3dB bandwidth, modulation efficiency and differential gain of $WS_{2}, {WSe}_{2}$ and ${MoTe}_{2}$ excitonic lasers. The high bandwidth for TMD exciton lasers found in this present study denotes the potential excellance of using these lasers in high frequency optical communication applications. Our rate equation based theoretical modeling in this study would be helpful for further investigation of different aspects of TMD exciton laser characteristics.

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