Abstract
ABSTRACT This study investigates the influence of a STO seeding layer on the crystallization of PZT thin films. It is shown that a reduction in crystallization temperature higher than 100°C can be achieved. STO layers less than 3 nm-thick induce a strong (111) orientation of PZT as observed with TiO2 seeding. This explains the increase of the remnant polarization of the seeded layers. Besides, STO seeding induces a reduction of the grain size.
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