Abstract
Effects of morphology of Pt, orientation of PZT, and stoichiometry of PZT on electrical properties of PZT thin film capacitors prepared using the sol-gel technique were investigated. Although the predominant orientation of PZT grown on as-deposited Ti/Pt was (100), both heat-treatment of Ti/Pt bottom electrode and application of the Ti-seed technique to Ti/Pt bottom electrode promoted (111) orientation of PZT. However, the surface of PZT on heat-treated Ti/Pt was very rough in contrast to the smooth surface for Ti-seeded PZT. Remnant polarization P/sub r/ increased from 14 [/spl mu/C/cm/sup 2/] for (100) orientation of PZT formed on as-deposited Ti/Pt to 31 [/spl mu/C/cm/sup 2/] for heat-treatment and 44 [/spl mu/C/cm/sup 2/] for Ti-seed. However, fatigue properties did not improve even though surface morphology of Ti/Pt bottom electrode and orientation of PZT were changed. Electrical properties of PZT showed strong stoichiometry (A/B) dependence of PZT. In particular, excess PbO by 30 mole % (A/B=1.30) revealed great fatigue performance.
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