Abstract
We have presented improvement in the internal quantum efficiency (IQE) for deep-ultraviolet (DUV) AlGaN-based multi-quantum well (MQW) light-emitting diodes (LEDs) by incorporating step-graded Superlattice (SL) structure in electron-blocking layer (EBL) on AlN/sapphire template. The result shows that the UV-LED with a step-graded SL composition of AlGaN/AlGaN EBL has superior hole injection efficiency and lower electron leakage over that of the UV-LED with a conventional AlGaN EBL. Additionally, the highest IQE obtained is 37.3% which is ∼15% higher than that of the traditional AlGaN EBL at a wavelength of ∼225 nm also the efficiency droop is 22.5% which is ∼15% less compared to the conventional UV-LED structure at an injection current density of 170 A/cm2, the best values ever reported.
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