Effect of static uniaxial stress on the Raman spectrum of silicon

Abstract

We have performed the first experimental investigation of the effects of static uniaxial stress on the frequency of the q ≈ 0 optical phonons in a diamond-type crystal. Application of uniaxial stress along [001] or [111] is found to cause splittings and shifts of the Raman peaks of the q ≈ 0 triply degenerate optical phonons. From the observed splittings we have obtained experimental values for the phenomenological coefficients which describe the changes in the ‘spring constant’ of these phonons with strain. Our results are in reasonable agreement with lattice dynamical theory.