Abstract
The authors present the results of the simulation, by means of a recently introduced transport and reaction model, of the sputter depth profiling of delta layers in a polymer system that undergoes mild modification during the measurement, such as in the case of X-ray photoelectron spectroscopy profiling with large cluster ion beams. They find that, even in the absence of roughening and at constant beam-induced mixing effects, the variations of sputtering yield caused by sample damage produce non-negligible changes in depth resolution.
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