Abstract
Thin films of copper nitride were deposited on glass substrates using dc reactive magnetron sputtering technique by sputtering of copper target under various sputtering powers in the range 30–140 watt. The influence of sputtering power on the structural, electrical and optical properties was systematically studied. Single phase films of copper nitride were obtained at a sputtering power of 75 watt with electrical resistivity of 5.8×10−2 Ω cm and an optical band gap of 1.84 eV.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Synthesis and Reactivity in Inorganic, Metal-Organic, and Nano-Metal Chemistry
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
