Effect of sputtering power on the microstructure and photelectric properties of Al doped ZnO thin films

Abstract

Investigation of the doped ZnO films deposited on different substrates plays a significant role in improving the optical properties of optical components. The Si wafer and glass were used as the substrates for comparison.The effect of sputtering power on the surface morphology, microstructure, optical and electrical properties of A1 doped ZnO (AZO for short) films were studied. The results show that the AZO films prepared on different substrates with various power all have a good c-axis preferred orientation; the surface particle size of the films increase gradually with the increasing sputtering power; the resistivity decreases first and increases when the the sputtering power reached 100 W. As for the films sputtered on glass, the result show that the visible light range has a high transmittance ( >80%), the absorption side wavelength is 350-400 nm.