Abstract
Transparent conductive Al-doped zinc oxide (ZnO:Al) films with different sputtering power were prepared on glass substrate using an RF sputtering technique. Two main peaks of the hexagonal wurtzite structure in the (002) and (004) direction were observed in every deposited ZnO:Al film. Intensities of these peaks were increased with the increasing sputtering power. Moreover, the surface roughness tended to increase with increasing sputtering power whereas the electrical resistance decreased with increasing sputtering power. The ZnO:Al film deposited at 150 and 200 W showed maximum optical transmittance of over 80% in the visible wavelength range. All results confirmed that the sputtering power directly affected film thickness because the higher sputtering power gave rise to a higher deposition rate; the surface morphology of the deposited films was dependent on the sputtering power and the optical properties were indirectly affected by the power of the deposition process.
Published Version
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