Abstract
c-axis oriented La 2−xSr xCu 1−yO 4 (x∼0.15) films were grown by dc magnetron sputtering on Y-stabilized ZrO 2, SrTiO 3 and LaAlO 3 substrates. It was found that the zero resistance temperature, T c0, and the lattice parameters of the films are strongly dependent on the sputtering O 2:Ar gas ratios. A strong thickness dependence of T c0 was also found in this kind of film, T c0 of 22 K was obtained on ∼2000 Å thickness film grown on LaAlO 3 substrate. The O 2:Ar ratios primarily modify the copper content, rather than the oxygen content of the films. The variation of the Cu content of the films strongly dominates the seperconductivity of the films.
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