Abstract
This study examined the effect of process parameters on ferroelectric properties of Pb(Zr, Ti)O3 (PZT) thin films. Nano-particle PZT ferroelectric thin films were prepared on the Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering. Experiment parameters including sputtering power, sputtering air pressure, ratio of O2/Ar, underlay temperature and annealed temperature are analyzed by uniform design. Five levels are set up in suitable and precise range, quadratic regression equations of experiment factors versus experiment responses were set up by step regression. Analysis of variance revealed that developed models were adequate and there is an optimize potential in PZT ferroelectric thin films preparation process by RF-magnetron sputtering.
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