Effect of spin-dependent screening on tunneling electroresistance and tunneling magnetoresistance in multiferroic tunnel junctions

Abstract

Using a ferroelectric barrier as a functional material in a (magnetic) tunnel junction has recently attracted significant interest due to new functionalities not available in conventional tunnel junctions. Switching a ferroelectric polarization of the barrier alters conductance resulting in a tunneling electroresistance (TER) effect. Using a ferroelectric barrier in a magnetic tunnel junction makes it mutiferroic where TER coexists with tunneling magnetoresistance (TMR). Here we develop a simple model for a multiferroic tunnel junction (MFTJ) which consists of two ferromagnetic electrodes separated by a ferroelectric barrier layer. The model explicitly includes the spin-dependent screening potential and thus extends previously developed models for FTJs and MFTJs. Our results demonstrate that the effect of spin-dependent screening may be sizable and may provide significant contributions to TMR and TER in MFTJs. We find that, similar to FTJs with a composite (ferroelectric/dielectric) barrier layer, the TER in a MFTJ with such a barrier is dramatically enhanced indicating that the resistance ratio between the states corresponding to the opposite polarization orientations may be as high as ${10}^{4}$ and even higher. Our results demonstrate the possibility of four resistance states in MFTJs with a pronounced difference in resistance and a possibility to control these resistance by an electric field (through ferroelectric polarization of the barrier) and by a magnetic field (through magnetization configuration of the electrodes). These functionalities may be interesting to device applications of MFTJs.