Effect of SOI substrate on silicon nitride resistance switching using MIS structure

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Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, the fabrication and electrical characterization of a fully compatible CMOS process on SOI substrate of 1R silicon SiN-based resistance switching (RS) MIS devices is presented. The RS characteristics are compared with the same devices previously fabricated on bulk silicon.