Abstract
The mechanical properties of small‐angle grain boundary (GB) in direct silicon bonded wafer are investigated by dislocation motion using the Vickers micro‐indentation combined with nano‐indentation technique. The dislocation motion is thoroughly hampered at the GB, due to the large strain field (comprehensive stress as high as ≈339 MPa), which is demonstrated by the micro‐Raman spectroscopy measurement. Nano‐indentation tests directly on GB show that Young's modulus and hardness are almost identical to those in the grain. The results indicate that electrically active small‐angle GB with high stress should not be the weak point of mechanical strength in multi‐crystalline silicon.
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