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Abstract
The effect of surfactant in a ceria slurry on the impact of nanotopography on post-CMP oxide thickness deviation (OTD) was investigated in a blanket wafer study. The ceria slurry was prepared using the solid-state displacement reaction method and an anionic organic surfactant was added with the concentration from 0 to 0.8 wt%. Under the condition of a fixed removal depth, the magnitude of post-CMP OTD due to nanotopography increased with the surfactant concentration in the slurry, demonstrating that the impact of nanotopography can be controlled using the slurry characteristics.
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