Abstract
The dielectric breakdown field is one of the important concerns for device reliability. The breakdown of dielectric is originated at a fatal flaw that grows to cause failure and can be explained by the weakest-link theory. In this study, metal-insulator-metal (MIM) capacitors with plasma enhanced chemical vapor deposited (PECVD) SiN x are prepared. Ammonia (NH 3) plasmas are applied after the deposition of the dielectric SiN x . The Weibull distribution function, which is based on the weakest-link theory, is employed to analyze the effect of the electrode area as well as the plasma treatment on the breakdown of the MIM capacitors. The time dependent dielectric breakdown testing indicates a decrease in both the leakage current and the lifetime of the MIM capacitors treated with plasma. Possible dielectric degradation mechanisms are explored.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
