Effect of SiO2 sublayer on the retention characteristics of nanometer-sized Si3N4 memristive devices investigated by low-frequency noise spectroscopy

Abstract

The results of the experimental investigation of the relationship between the low-frequency noise spectrum of the electric current through conducting filaments in Si3N4 films with a thickness of 6 nm on n ++-Si(001) conducting substrates and retention characteristics of these filaments are reported. Two structures are investigated: Si3N4/Si, thin (about 6 nm) Si3N4 film on the n++-Si substrate; Si3N4/SiO2/Si, a similar structure with a 2 nm SiO2 sublayer between the film and the substrate. A detailed comparison of the experimentally extracted parameters, such as average current through the filament, probability density function, and spectrum, is presented with a discussion of possible physical reasons for the difference between the testing structures and their effect on retention characteristics.