Abstract
Transparent conductive ITO/Cu/ITO films were deposited on polyethylene terephthalate (PET) substrates with a SiO 2 buffer layer by magnetron sputtering using three cathodes at room temperature. The effect of the SiO 2 buffer layer thickness on the electrical and optical properties of ITO/Cu/ITO films was investigated. The ITO/Cu/ITO film deposited on the 40 nm thick SiO 2 buffer layer exhibits a sheet resistance of 143Ω/sq and transmittance of 65% at 550 nm wavelength. Highly transparent ITO/Cu/ITO films with a transmittance of 80% and a sheet resistance of 98.7Ω/sq have been obtained by applying −60 V substrate bias.
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