Abstract
Silicon carbide (SiC) ceramics with Y2O3-Er2O3 as sintering additives were prepared by spark plasma sintering (SPS). The effects of sintering temperatures and Y2O3-Er2O3 contents on the microstructure, thermal conductivity, electrical, and mechanical properties were investigated. The increasing of sintering temperatures promoted the densification of SiC ceramics, thus increasing the thermal conductivity and electrical resistivity. With the increase of the sintering additive contents, the electrical resistivity increased due to the formation of the electrical insulating network; and the thermal conductivity first increased and then decreased, which was related to the content and distribution of the secondary phase among the SiC grains. The SiC ceramics sintered at 2000 °C with 9 wt.% Y2O3-Er2O3 exhibited higher electrical resistivity and thermal conductivity, which were 4.28 × 109 Ω·cm and 96.68 W/m·K, respectively.
Highlights
Silicon carbide (SiC) ceramic has enjoyed a good reputation for its excellent mechanical, chemical, and thermal properties [1,2,3,4]
From the XRD patterns of SiC ceramics sintered at different temperatures, it can be inferred that there were no other crystallized phases except for the SiC and additives
The XRD results show that the main phases of the samples are SiC and Er2 O3
Summary
Silicon carbide (SiC) ceramic has enjoyed a good reputation for its excellent mechanical, chemical, and thermal properties [1,2,3,4]. It has been widely used as structural materials, such as mechanical seals [5], heat exchangers [6], and optical mirrors for space telescopes [7]. If the electrical resistivity of SiC materials can be increased while maintaining the high thermal conductivity, SiC would undoubtedly be a suitable substrate material. How to increase the electrical resistivity of SiC ceramics is important
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