Effect of Sintering Parameters and Ta<sub>2</sub>O<sub>5</sub> Doping on the Microstructure and Dielectric Properties of BaTiO<sub>3</sub> Based Ceramics

Abstract

The main focus of the research was to correlate the composition and sintering parameters with the microstructure and dielectric properties of Ta2O5 (Tantalum Oxide) doped BaTiO3 (Barium Titanate) ceramics. Ta2O5 was doped at three different percentages viz. 0.5, 1.0 and 1.5 mole%. The doped samples were then sintered using both single and double stage sintering techniques. Thereafter field emission scanning electron microscope (FESEM) and X-ray diffraction (XRD) techniques were used to examine the structure of the samples with particular focus on the incorporation of Ta5+ions into the BaTiO3 crystal lattice. Finally, the dielectric properties were analyzed using impedence analyzer and the relationship between the properties and structure of doped BaTiO3 was established. From the research, it can be stated that double stage sintering yielded best dielectric properties. The best stable value of room temperature dielectric constant (k) of 19000 was obtained for 1.5mole % Ta2O5 doped BaTiO3 sample, sintered at 1320°C for 0 hour and 1280°C for 6 hours due to the combination of high percent theoretical density (%TD) and optimum grain size. At a temperature range of 30°C to 60°C, this combination of composition and sintering parameters yielded dielectric constant in the range of 18000-19000.