Effect of Silicon Application on Wheat Under Boron Stress

Abstract

In this study, effects of different silicon (Si) concentrations (0.75, 5, 10 mM) on wheat under boron(B) stress, investigated by means of some stress indicators such as tissue length, malondialdehyde (MDA), ion leakage, relative water content (RWC) and total chlorophyll content. Stress mitigating effects of silicon were observed mainly as reductions on membrane damage with reduced MDA concentrations and decreased ion leakage levels. Although necrosis was present on shoot tissues due to the boron stress, no significant change observed on shoot and root length with the application of Si. On the contrary, relative water content (RWC) has changed positively with the implementation of Si under boron stress. Furthermore Si has enhanced RWC level in Si+B co-applicated sets to the level of control plants. Total chlorophyll content increased with the existance of 0.75 and 5 mM Si, while 10 mM Si had no effect on the chorophyll content under boron stress. Overall, silicon was found to have a potential to alleviate boron stress in wheat production.