Abstract
Ge2Sb2Te5 (GST) alloys have the ability of rapidly transforming between amorphous and crystalline phases, therefore, they can be adopted in the non-volatile phase change memory. Here, using First-Principles Molecular Dynamic Simulations, we studied the amorphous process of Si-doped GST and its possible applications, the effect of Si doping on the structure and optical properties of GST was studied by ab initio calculations. The results show that the Si doping can improve the stability of GST material and the 20% Si-doped GST is the most stable. Moreover, by analysis the complex dielectric function, absorption, reflectivity, and conductivity, it can be seen from the optical properties that 20% Si-doped GST has a lower turn-on voltage, lower RESET current compared with GST which provides a theoretical basis for the application of GST materials in optical storage devices.
Published Version
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