Abstract
Boron Phosphide (BP) layers have been grown on Si (100) as a substrate for cubic GaN heteroepitaxy. Si heavy doping was attempted to reduce the threading dislocation density in the BP. To observe the effect on dislocations in BP by Si doping, we used cross-sectional transmission electron microscopy (XTEM). Also, Glow Discharge-Optical Emission Spectroscopy (GDOES) were used to evaluate the effect of Si doping. For the samples under the conditions (a) and (e), we found the formation of pits at BP surface and an increasing in the proportion of threading dislocations with an angle of 90 ° to the surface. We could not see a significant change in the threading dislocation density by Si doping under the conditions used in this paper.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
