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Abstract
We have found that high levels of Si doping of MBE-grown (001)GaAs induce a change in the ordering of the (2×4)/c(2×8) surface reconstruction. Scanning tunneling microscope (STM) images show that this arises from the formation of large numbers of kinks in the dinner-vacancy rows of the (2×4)/c(2×8) reconstruction. The kinks occur in lines across the surface, forming domain boundaries between well ordered regions of c(2×8) surface. We are able to show that these kink sites act as surface acceptors. They are formed so as to allow electrons in the doped layer to drop from the Fermi level to the acceptor state, lowering the electronic energy of the surface region. The band-bending that results from this causes pinning of the Fermi level at the surface. Quantitative measurements of the surface density of these kink sites as a function of doping level and layer thickness allow us to determine that each kink site accepts one electron.
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