Abstract
The silicon-doped BiVO 4 film was fabricated by modified metalorganic decomposition (MOD) method. XRD analysis indicated that the crystal size of the BiVO 4 film was decreased from 32.4 nm to 23.9 nm by doping Si. The measurements of FT-IR spectra and the water contact angle showed that doping Si could elevate the surface hydrophilicity of the BiVO 4 film. The phenol elimination rate on the Si-doped BiVO 4 film electrode in the photoelectrocatalytic process was 1.84 times as great as that on the BiVO 4 film electrode. The enhanced photoelectrocatalytic performance was attributed to the decrease of the crystalline size and the enhancement of the hydrophilic performance.
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