Effect of Si dielectric materials on the magnetic coupling of Tb–Fe–Co multilayer thin films

Abstract

Magnetization behavior of TbFeCo thin film materials was systematically examined. In a single layer system, the sputtering parameters were observed to significantly affect the M– H hysteresis of the TbFeCo thin films, which is ascribed to the modification on the thin film composition. Moreover, the sputtering conditions were observed to change the stress condition of the Si 3N 4 passivation layer, which, in turn, also pronouncedly alters the M– H hysteresis behavior of the TbFeCo thin films. TbFeCo/Si/TbFeCo multilayer thin films, which were prepared carefully to assure the correct composition of each TbFeCo films, were observed to behave similarly with pseudo-spin-valve like magnetic materials system. The coercive field ( H c) of the low- H c TbFeCo films was modified markedly due to TbFeCo–Si–TbFeCo magnetic coupling effect and was observed to fluctuate periodically with the thickness of Si-intermediate layer, a behavior similar to RKKY phenomenon.