Effect of Si content on the microstructure and high temperature oxidation resistance of TiAlCrNiSi high-entropy alloy films synthesized by multi-target magnetron co-sputtering

Abstract

In this study, we prepared TiAlCrNiSi high-entropy alloy films (HEFs) with different contents of four elements by multi-target magnetron co-sputtering with regulated sputtering power, and the elemental contents of the films all met the high-entropy range (5 at%−35 at%). Scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed that the surface of the films was relatively smooth, the increase of sputtering power and Si element in the films reduced the roughness of the films. This demonstrates the effect of Si in refining the grains and reducing the roughness of the film. X-ray diffraction (XRD) showed that the average grain size of films decreases with the increase of Si content. This phenomenon proves that Si has the effect of refining grains and reducing the roughness of the film. The TC4 substrate and the films were treated at 700 ℃ for 50 h. It was found that TiAlCrNiSi HEFs could improve the high temperature oxidation resistance of TC4. The mechanism of oxidation resistance of the films was investigated by XRD, X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM), and it was found that the generation of dense oxides Al2O3, Cr2O3 and SiO2, the grain refining effect of Si and the appearance of amorphous structure were the main reasons for the increased oxidation resistance.