Abstract
Se-doped ZnO lms have been deposited on the sapphire substrates by the radio-frequency magnetron sputtering technique. An in uence of the isoelectronic impurity Se on the room-temperature luminescence of the ZnO lms is studied. It is revealed that the Se doping leads to an appearance of the intense near-band edge emission spectrum, which consists of three emission bands. The dominant emission band is related to the recombination of the bound excitons. The radiation caused by the band-to-band transitions of free carriers is observed in the high-energy side of the spectrum (~ω > Eg).
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