Effect of screening on energy-dependent electron–phonon relaxation rate via intrinsic and extrinsic scattering channels in graphene on GaAs substrate

Abstract

We obtain analytical results on the effect of screening on electron–phonon (e-p) relaxation rate in single-layer graphene (SLG) placed on any substrate using the Boltzmann transport formalism (BTF). The screening has been taken into account through the Thomas-Fermi (TF) and Random Phase Approximation (RPA) model. The four intrinsic and extrinsic phononic modes considered for electron-phonon scattering are the acoustic, optic, surface polar acoustic (piezoelectric), and surface polar optic (SO) phonons. All the four considered phononic modes coupling with free carriers provide significant pathways for e-p relaxation. We further investigate the significance of screening in the four phononic modes in electron energy-dependent e-p relaxation rate in SLG on GaAs substrate in particular. The obtained screened analytical solutions are novel and are not reported elsewhere.