Abstract
This study focuses on Sb-doped Mg2(Si,Sn) thermoelectric material. Samples were successfully fabricated using a hybrid synthesis method consisting of three different processes: induction melting, solid-state reaction, and a hot-press sintering technique. We found that the carrier concentration increased with Sb content, while the Seebeck coefficient exhibited a decreasing trend. Sb doping was shown to improve the power factor and thermoelectric figure of merit compared with the undoped material, yielding a peak figure of merit (ZT) of ~0.55 at 620 K, while leaving the band gap of Mg2Si0.7Sn0.3 almost unchanged.
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