Abstract
We studied the effects of antimony (Sb) doping on strain relaxation in a silicon-germanium (SiGe) epitaxial film on a silicon substrate. Misfit strain relaxation proceeded faster in the Sb-doped SiGe than in the undoped film. However, the degree of enhancement did not correspond to the Sb concentration of the SiGe film below 700 °C. This was not expected from the effects of Sb on the threading dislocation velocity, which is larger in SiGe films with a higher Sb concentration. The results indicate that dislocation nucleation rather than the dislocation velocity had a substantial effect at low temperatures. On the other hand, relaxation was enhanced in the heavily Sb-doped film at 900 °C. We consider that this may be attributed to the enhancing effects of dislocation motion.
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