Abstract
Antimony (Sb) doping of SnO2 nanowires (NWs) was investigated for its optical and electrical effects. The low-temperature photoluminescence spectra of SnO2 NWs varied significantly with increasing Sb content, where the temperature-dependence of the visible emission at ca. 400nm was distinctive with Sb-doping, indicating different defect states, such as neutral and positively charged oxygen vacancies. Field effect transistors (FETs) with low-level Sb-doped SnO2 NW channels exhibited higher mobility, charge concentration, and faster response and recovery to UV light than intrinsic SnO2 NW FETs.
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