Abstract
We investigated the effect of a sacrificial AlN layer on the deep energy level states of 4H-SiC surface. The samples with and without AlN layer have been annealed at 1300 °C for 30 minutes duration using a tube furnace. After annealing the samples, the changes of the carbon vacancy (VC) related Z1/2 defect characteristics were analyzed by deep level transient spectroscopy. The trap energy associated with double negative acceptor (VC(2-/0)) appears at ˜0.7 eV and was reduced from ˜0.687 to ˜0.582 eV in the sacrificial AlN layer samples. In addition, the capture cross section was significantly improved from ˜2.1×10-14 to ˜3.8×10-16 cm-2 and the trap concentration was reduced by approximately 40 times.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call