Abstract
In this paper the effects of oxidation and annealing processes on the minority carrier lifetime in silicon have been investigated. Using the pulsed MOS capacitor method a comparison of two methods used to grow very thin SiO 2 layers, conventional furnace processing and rapid thermal processing (RPT), has been carried out. It is shown that those substrates which underwent RT high temperature steps sustained less damage, probably due to the lower contamination that results from this method.
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