Effect of rotation of abrasives on material removal in chemical mechanical polishing using a proposed three-body model: Molecular dynamics simulation

Abstract

A three-body wear model, comprising a soft polyurethane pad, silica abrasive, and crystalline silicon substrate, was established to analyze the impact of abrasive rotation on material removal process during chemical mechanical polishing (CMP) through molecular dynamics simulation. The results revealed that abrasive rotation would reduce the local temperature in the contact area between the abrasive and the substrate due to the cooling effect, thereby enhancing the surface quality of the substrate and decreasing the material removal volume (MRV). However, another effect of abrasive rotation, termed the "hedgehog effect", resulting in an increase in MRV. Through the trade-off between the cooling effect and the porcupine effect, the abrasive rotation can not only improve surface quality but also increase the MRV.