Effect of rotating magnetic field intensity on structure and electrical and optical properties of GaInSb crystal grown with travelling heater method

Abstract

Ga1−x In x Sb(0 < x < 1) crystal is a very promising substrate material, which can be used to fabricate a variety of high-performance infrared detectors and lasers by epitaxial growth. Herein, we prepared high quality Ga0.86In0.14Sb crystal (25 mm diameter, 100 mm length) with travelling heater method applied rotating magnetic field (RMF), and revealed the effects of RMF intensity on structure and electrical and optical properties of the crystal. As the RMF intensity increased the crystal quality significantly improved, and the radial segregation of indium decreased from 0.258 to 0.031 mol% mm−1, in the center of the crystal. Similarly, the segregation of indium along the ingot between 20 to 80 mm, toward the traveling zone, decreased from 0.114 to 0.038 mol% mm−1. The dislocation density of GaInSb crystal ingot also decreased from 5.361 × 105 cm−2 to 5.295 × 103 cm−2. The electric properties of the crystal also improved, the carrier mobility increased to 1.902 × 103 from 1.358 × 103cm2 (V·s)−1, the resistivity decreased to 1.047 × 10−3 from 1.822 × 10−3 Ω·cm. Moreover, the infrared transmittance increased from 36% to 39%.