Effect of RF Power on Physical Properties of MgTiO3 Films by RF Magnetron Sputtering

Abstract

Physical properties of rf-sputtered crystalline MgTiO3 thin films deposited on n-type Si(100) substrates at different rf powers have been investigated. These films were fabricated at 400°C by choosing different RF powers (from 100 to 400 W) at a substrate temperature of 400°C which is much lower than the bulk sintering temperature. X-ray diffraction (XRD) analysis showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the films increased with increasing RF power. The electrical properties were measured using C–V and I–V measurements on metal-insulator-semiconductor (MIS) capacitor structures. At an RF power of 400 W and a substrate temperature of 400°C, a dielectric constant of 16.2 ( f =10 MHz), a leakage current density of 2.03 ×10-9 A/mm2 and a dissipation factor of 0.041 were obtained.