Effect of reverse substrate bias on the minigap in Si inversion layers

Abstract

The influence of a reverse substrate bias on the minigap of Si inversion layers on (10, 1, 1) and (8, 1, 1) surfaces has been investigated. Substrate bias shifts the position of the gap to higher gate voltages but the center of the gap remains at a fixed mobile charge density. Reverse bias increases the magnitude of the minigap by as much as 30%.