Activated channel conductivity in silicon inversion layers at high temperatures

Abstract

The effects of a reverse substrate bias on the resistivity of silicon inversion layers has been studied at low carrier densities for 4.2 ≲ T ≲ 77 K. At low temperatures the activation is small and decreases when a reverse substrate bias is applied. For T ≳ 10–20 K the activation energy increases [assuming ρ ∞ ρ0 exp(+ Δ/ kT)] and the effect of substrate bias is more complex. The activation energy increases for p-channels and decreases for n-channels when substrate bias is applied.