Abstract
To investigate the modulation of compressive strains on the thermal transport of silica thin films, a test method is proposed. A more accurate and anti-interference thermal conductivity test system was built, and the thermal-induced compressive strain was regulated by the external tensile stress setup. The microstructure and composition of sample were analyzed, and regulation law of compressive strains on the thermal conductivity of silica thin films was obtained. The effect of compressive strains on the thermal conduction of amorphous silica and interfacial thermal resistance was analyzed based on molecular dynamics simulation. The thermal conductivity calculation result is consistent with the change trend of the test result. The interfacial thermal resistance is small and the strain effect can be ignored.
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