Abstract
The impact of recessed gate metal on the performance of double-gate junctionless MOSFET (DG-JLMOSFET) has been studied considering GaAs as channel material. The geometry of the gate metal is changed to obtain the best performance by recessing it to gate oxide for 1 nm vertically and extending it up to 9 nm horizontally on both sides. Changing the gate's geometrical shape and physical dimension, the leakage current is found to be reduced significantly for a fixed channel length of 10 nm. This results in a higher I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> /I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oFF</inf> ratio of ~ 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> which in turn mitigates the drain induced barrier lowering (DIBL). The calculated results on various short channel effects (SCEs) indicate that the proposed model seems to have a greater drain current and a decreased subthreshold swing (SS) of 71 mV/Dec. The results of various figure of merits (FOMs) show that GaAs-based recessed gate DG-JLMOSFETs are extremely viable for the advancement of the upcoming nano-technology.
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