Effect of Rare-Earth Doping and Nitrogen Passivation Treatments on the Properties of Ultra-thin Hafnia Films

Abstract

Rare-earth doped hafnia films are of great interest as higher-k dielectrics that could potentially function as alternate gate dielectrics on Si and other high-mobility semiconductor channels. We present results on the effect of nitridation on electrical and dielectric properties of hafnia films prepared by physical vapor deposition. Particular emphasis is placed on passivation of point defects by nitrogen studied through high temperature electrochemical conductivity measurements.