Abstract
Abstract A high performance light-beam-induced-current (LBIC) analyser has been used to determine the influence of rapid thermal annealing (RTA) on the minority-carrier diffusion length ( L ). For this purpose a Schottky diode (Cr/Si) was fabricated on polycrystalline p-type silicon. The contacts were obtained by a “cold” technology. The diffusion length was determined by a laser spot scanning method. Present investigations on the effect of RTA on the intragrain transport properties showed a sharp decrease, and consequently a degradation in the overall solar cell efficiency, in L for samples subjected to RTA above 800°C; the smallest decrease in L after RTA above this temperature was more than two times the original L value of the unannealed sample. The evolution of L during some solar cell fabrication heat process treatments is also reported.
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