Abstract
An investigation of the electrical and microstructural properties of gold (Au)/p-type silicon (Si) contact was performed as a function of rapid thermal annealing (RTA) temperatures. Au films reacted with Si and produced Au2Si and Au3Si phases during the deposition of the films at room temperature. The electrical properties of the Au contact to p-type Si degraded with increasing RTA temperature. Such a degradation of the electrical properties could be associated with the degradation of the surface and interface morphology caused by the formation of Au-silicide clusters. The RTA process at 500 °C led to an increase in the size of the Au-silicide Island. This led to the further degradation of the electrical properties after annealing at 500 °C.
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