Abstract
Postgrowth rapid thermal annealing (RTA) was used to modify the optical properties of self-assembled InAs quantum dots (QDs) embedded in a photonic crystal nanocavity. Compared with the reference QDs in the unpatterned regions, it was found that the effect of RTA on the luminescence blueshift of QDs embedded in the nanocavities is similar to that from the unpatterned regions. However, InAs QDs in nanocavities exhibit an anomalous variation of luminescent linewidth during the course of RTA. This could be attributed to the deterioration of InAs QDs at the edge of photonic crystal air holes at high annealing temperatures. The stable position of cavity modes during the RTA temperatures shows the RTA technique could be applied to tune the spectral coupling of QDs/cavities when the QD spectra are on the red side of a cavity mode.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have