Effect of random macroscopic defects on kinetic phenomena in a layered semiconductor n-InSe with strong electric fields

Abstract

In single-crystal n-InSe layered semiconductors at 77÷300 K, the dependence of the electrical conductivity on the strength of a strong electric field by an ultrahigh frequency (UHF) was studied. It was established that at low temperatures, the magnitude and course of the change in conductivity under the action of a strong electric field in samples with different initial (existing at 77 K) specific conductivities differ. The dependence of the electrical conductivity on the electric field strength in the most low-resistance samples is satisfactorily described by the theory of heating of charge carriers by the electric field in spatially homogeneous crystalline semiconductors, and with a decrease in the value of specific conductivity, it disagrees with this theory. It is shown that these discrepancies are due to the presence of random macroscopic defects in the crystals under study, which are formed due to the weakness of the interlayer coupling.