Abstract
By measuring the Specific integral current photosensitivity from the dose of γ-quantum 60 Co, the influence of γ-quantum on the photosensitivity p-Si , p-Si , p-Si and p-Si . It is analyzed that the appearance of band corrugation in compensated silicon is caused by fluctuations in the distribution of impurity atoms over the sample. It was found that the greater the solubility and diffusion coefficient of impurities in silicon, the more K increases. It is proposed that a method of manufacturing photosensors based on p-Si possessing increased radiation resistance up to a dose of gamma quanta of ~ 10 9 P is proposed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
