Abstract
The impact of 193 nm ArF pulsed UV laser irradiation on thermally grown SiO2/4H-SiC structures was investigated. The effect of pulsed UV light on the near-interface oxide trap of SiO2/SiC structure is greater than that on the interface and the near-interface SiC substrate. The defects near the interface do not change monotonously with the increase in irradiation power, which indicates that UV irradiation has at least two effects on SiO2/SiC. When the irradiation power is too high, new defects will be introduced into the oxide layer. This article reveals a potential mechanism for high-energy photon irradiation to change device performance in semiconductor plasma technology.
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